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Freescale Semiconductor Technical Data
Document Number: MRF8S9170N Rev. 0, 9/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.1 18.9 hD (%) 36.5 36.1 36.0 Output PAR (dB) 6.0 6.1 6.0 ACPR (dBc) - 36.6 - 36.7 - 36.1
MRF8S9170NR3
920 - 960 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point ] 177 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
CASE 2021 - 02, STYLE 1 OM - 780 - 2
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +70 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 78C, 50 W CW, 28 Vdc, IDQ = 1000 mA Case Temperature 82C, 170 W CW, 28 Vdc, IDQ = 1000 mA Symbol RJC Value (2,3) 0.38 0.33 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF8S9170NR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 355 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.1 0.19 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg., f = 920 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18.0 34.0 5.5 -- -- 19.3 36.5 6.0 - 36.6 - 10 21.0 -- -- - 34.5 -7 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. Gps (dB) 19.3 19.1 18.9 hD (%) 36.5 36.1 36.0 Output PAR (dB) 6.0 6.1 6.0 ACPR (dBc) - 36.6 - 36.7 - 36.1 IRL (dB) - 10 - 12 - 16 (continued)
MRF8S9170NR3 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 50 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 177 17 Max -- -- Unit W MHz Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 920 - 960 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
50 0.32 0.01 0.01
-- -- -- --
MHz dB dB/C dBm/C
MRF8S9170NR3 RF Device Data Freescale Semiconductor 3
C28 B1
C6 C7 C8 R1 C5
C18
C20 C22 C24 C26
C4
R2
C9 C12 C14 CUT OUT AREA C11 C13 C15 C10 C16 C17
C1
C2 C3
C19 C21 C23
C25 C27
MRF8S9170N Rev. 0
Figure 1. MRF8S9170NR3 Test Circuit Component Layout Table 6. MRF8S9170NR3 Test Circuit Component Designations and Values
Part B1 C1*, C8, C17*, C18, C19, C20, C21 C2 C3, C4 C5 C6 C7, C22, C23 C9, C10 C11, C12 C13, C14 C15 C16 C24, C25, C26, C27 C28 R1 R2 PCB *Capacitors mounted vertically. Description Short Ferrite Bead 39 pF Chip Capacitors 2.0 pF Chip Capacitor 3.3 pF Chip Capacitors 100 F, 50 V Electrolytic Capacitor 3.3. F, 100 V Chip Capacitor 0.1 F Chip Capacitors 6.8 pF Chip Capacitors 6.2 pF Chip Capacitors 5.6 pF Chip Capacitors 4.7 pF Chip Capacitor 2.2 pF Chip Capacitor 22 F, 50 V Chip Capacitors 470 F, 63 V Electrolytic Capacitor 2 K, 1/4 W Chip Resistor 5.1 , 1/4 W Chip Resistor 0.030, r = 3.5 Part Number 2743019447 ATC100B390JT500XT ATC100B2R0BT500XT ATC100B3R3CT500XT 476KXM063M C4532JB1H335KT C3216X7R2E104KT ATC100B6R8CT500XT ATC100B6R2BT500XT ATC100B5R6CT500XT ATC100B4R7CT500XT ATC100B2R2JT500XT C5750JF1H226ZT KME63VB471M12x25LL CRCW12062K00FKEA CRCW12065R10FKEA RF - 35 ATC ATC ATC Illinois Cap TDK TDK ATC ATC ATC ATC ATC TDK Chemi - Con Vishay Vishay Taconic Manufacturer Fair - Rite
MRF8S9170NR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 20 19.8 19.6 Gps, POWER GAIN (dB) 19.4 19.2 19 18.8 18.6 18.4 18.2 18 820 ACPR 840 860 880 900 920 940 960 IRL PARC D 44 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1000 mA 42 Single-Carrier W-CDMA, 3.85 MHz Channel Bandwidth Input Signal PAR = 7.5 dB 40 @ 0.01% Probability on CCDF 38 Gps 36 -27 ACPR (dBc) -29 -31 -33 -35 -37 980 0 -5 -10 -15 -20
IRL, INPUT RETURN LOSS (dB)
-1.5 -2 -2.5 -3 -3.5 -4 PARC (dB)
f, FREQUENCY (MHz)
Figure 2. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg.
-5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 1
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1000 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3-U IM3-L IM5-U IM5-L IM7-U IM7-L 10 TWO-TONE SPACING (MHz) 100
Figure 3. Intermodulation Distortion Products versus Two - Tone Spacing
21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19 18 17 16 15 1 0 -1 -2 -1 dB = 40 W Gps -3 -4 -5 20 -2 dB = 58.4 W PARC -3 dB = 79.1 W 30 20 40 60 80 100 120 140 160 Pout, OUTPUT POWER (WATTS) 40 D 50 -15 -20 -25 -30 -35 -40 -45 ACPR (dBc)
ACPR
60
Figure 4. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 1000 mA, f = 940 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
80 70
MRF8S9170NR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
24 920 MHz 22 Gps, POWER GAIN (dB) 20 18 f = 920 MHz Gps 940 MHz 940 MHz VDD = 28 Vdc, IDQ = 1000 mA Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 100 Pout, OUTPUT POWER (WATTS) AVG. D, DRAIN EFFICIENCY (%) 940 MHz 960 MHz 60 50 40 30 20 10 200 D 70 -20 -25 -30 -35 -40 -45 -50 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6
16 920 MHz 14 12 10 ACPR
960 MHz
Figure 5. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
24 20 16 GAIN (dB) 12 8 4 0 -4 -8 600 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 1000 mA Gain 0 -5 -10 -15 -20 -25 -30 -35 -40 1200 IRL (dB) 3.84 MHz Channel BW
800
1000
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 7. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal MRF8S9170NR3 6
Figure 8. Single - Carrier W - CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource W 2.34 - j3.90 2.51 - j3.75 2.54 - j3.77 2.37 - j3.71 2.26 - j3.50 2.27 - j3.33 2.28 - j3.26 2.24 - j3.19 2.21 - j3.10 Zload W 2.08 - j1.11 2.07 - j1.05 2.01 - j1.09 1.81 - j1.11 1.58 - j1.02 1.43 - j0.89 1.27 - j0.77 1.10 - j0.64 0.94 - j0.47
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9170NR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 909 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 58 Ideal 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 229 217 205 dBm 53.6 53.6 53.1 285 269.2 259 P3dB Watts dBm 54.6 54.3 54.1 f = 940 MHz f = 960 MHz f = 940 MHz f = 920 MHz Actual f = 920 MHz
Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource 4.6 - j2.8 4.7 - j2.1 5.2 - j3.4 Zload 0.8 - j1.6 0.8 - j1.6 1.0 - j1.7
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S9170NR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S9170NR3 RF Device Data Freescale Semiconductor 9
MRF8S9170NR3 10 RF Device Data Freescale Semiconductor
MRF8S9170NR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Sept. 2009 * Initial Release of Data Sheet Description
MRF8S9170NR3 12 RF Device Data Freescale Semiconductor
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MRF8S9170NR3
Document Number: RF Device Data MRF8S9170N Rev. 0, 9/2009 Freescale Semiconductor
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